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| HSDL-4270 High-Performance T-13/4 (5mm) AlGaAs Infrared (940nm) Lamp Datasheet Description The HSDL-4270 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-13/4 (5mm) package. 5.0 0.2 Features * High Power AlGaAs LED Technology * 940 nm Wavelength * T-13/4 Package * Low Cost * Low Forward Voltage: 1.3V at 20mA Applications * Industrial Infrared Equipments and Applications (Smoke Detectors etc) * Consumer Electronics (Infrared Remote Controller etc) 1.14 0.2 * Infrared spotlight for cameras * Discrete Interrupters * Infrared source for optical counters and card readers 5.8 0.2 8.7 0.2 Part Number 31.6 min. Lead Form Straight Shipping Option Bulk HSDL-4270 0.7 max. 2.54 CATHODE FLAT 1.0 min. 0.50 0.1 Absolute Maximum Ratings at 25C Parameter Peak Forward Current Symbol IFPK Minimum - Maximum 500 Unit mA Reference Figure 3 Duty cycle = 20% Pulse Width = 100us [1] IR=100uA Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. IFDC PDISS VR TS TJ 5 -40 100 170 100 110 260 for 5 sec mA mW V C C C Recommended Operating Conditions Parameter Operating Temperature Symbol TO Min -40 Max 85 Unit C Reference Electrical Characteristics at 25C Parameter Forward Voltage Forward Voltage Temperature Coefficient Series Resistance Diode Capacitance Thermal Resistance, Junction to Ambient Symbol VF V/T RS CO Rja Min. Typ. 1.3 1.5 -1.4 3.0 27 300 Max. 1.4 1.7 Unit V mV/C Ohms pF C/W Condition IFDC=20mA IFDC=100mA IFDC=100mA IFDC=100mA Vbias=0V, f=1MHz Reference Figure 2 Figure 3 Figure 4 Optical Characteristics at 25C Parameter Radiant On-Axis Intensity Radiant On-Axis Intensity Temperature Coefficient Viewing Angle Peak Wavelength Peak wavelength Temperature Coefficient Spectral Width Optical Rise and Fall Time Symbol IE IE/T 21/2 pk /T tr/tf Min. 76 - Typ. 100 -0.48 15 940 0.26 45 1.3 Max. - Unit mW/Sr %/C nm nm/C nm s Condition IFDC=100mA IFDC=100mA Reference Figure 5 Figure 7 Figure 1 IFDC=100mA IFDC=20mA IFDC=100mA Duty Ratio = 50% Pulse Width=10s Figure 1 2 Peak Wavelength Vs Rel Radiant Intensity 1.2 Relative Radiant Intensity 100 Forward Current - If(mA) V-I Characteristics 1.0 0.8 0.6 0.4 0.2 0 800 10 1 850 900 950 Peak Wavelength - nm 1000 0 0.5 1 Forward Voltage - Vf(V) 1.5 Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage Peak Forward Voltage Vs Peak Forward Current 1000 Forward Voltage Vs Temperature 1.7 Peak Forward Current-Ifpk(mA) 100 Forward Voltage 1.5 1.3 1.1 0.9 0.7 at Iled=20mA at Iled=100mA -20 0 20 40 60 Temperature 80 100 120 10 1 0 0.5 1 1.5 2 2.5 Peak Forward Voltage-Vfpk(V) 0.5 -40 Figure 3. Peak Forward Current vs. Forward Voltage Figure 4. Forward Voltage vs. Ambient Temperature Forward Current Vs Relative Radiant Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 Forward Current in mA 100 120 Figure 5. Relative Radiant Intensity vs. DC Forward Curren Maximum Permisible DC forward current vs. ambient temperature 110 100 300 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 TA- Ambient Temperature -C Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX =110C 3 Relative Radiant Intensity IFDC MAX - Maximum DC Forward Current - mA 4270-Angle Vs Relative Radiant Intensity 1.2 Relative Radiant Intensity 1.0 0.8 0.6 0.4 0.2 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Angle in degrees Figure 7. Radiant Intensity vs. Angular Displacement For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright (c) 2007 Lite-On Technology Corporation. All rights reserved. |
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